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| Parameter | APTM100U13SG | |
|---|---|---|
IC package | Package | J3 Module |
Manufacturer | Manufacturer | Microsemi-PPG |
Type of mounting a component on a board/circuit | Mount | On chassis/wire |
Power dissipation | P | <1.25 kW |
Input capacitance of field effect transistor | Ciss | 31.6 nFVds = 25V |
Continuous drain current | IDSS | <65 A |
FET channel type | Channel | N-ch |
Channel resistance at ON state | RDS-ON | <145 mΩId, Vgs = 32.5A, 10V |
Gate charge | QG | 2 µCVgs = 10V |
FET Feature | FET Feature | Logic Level Gate |