APTM100SK40

APTM100SK40, APTM100SK40T1G

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Description

Parameters

ParameterAPTM100SK40T1G
IC package
Package
SP1 Module
Manufacturer
Manufacturer
Microsemi-PPG
Type of mounting a component on a board/circuit
Mount
On chassis/wire
Power dissipation
P
<357 W
Input capacitance of field effect transistor
Ciss
6.8 nFVds = 25V
Continuous drain current
IDSS
<20 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<480 mΩId, Vgs = 16A, 10V
Gate charge
QG
260 nCVgs = 10V
FET Feature
FET Feature
Standard