This page is planned to add content in the near future.
Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address
| Parameter | APTM100DA18T1G | APTM100DA18TG | |
|---|---|---|---|
IC package | Package | SP1 Module | SP4 Module |
Manufacturer | Manufacturer | Microsemi-PPG | |
Type of mounting a component on a board/circuit | Mount | On chassis/wire | |
Power dissipation | P | <657 W | <780 W |
Input capacitance of field effect transistor | Ciss | 14.8 nFVds = 25V | 10.4 nFVds = 25V |
Continuous drain current | IDSS | <40 A | <43 A |
FET channel type | Channel | N-ch | |
Channel resistance at ON state | RDS-ON | <216 mΩId, Vgs = 33A, 10V | <210 mΩId, Vgs = 21.5A, 10V |
Gate charge | QG | 570 nCVgs = 10V | 372 nCVgs = 10V |
FET Feature | FET Feature | Standard | |