APTC80DA15T1G

APTC80DA15, APTC80DA15T1G

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Description

Parameters

ParameterAPTC80DA15T1G
IC package
Package
SP1 Module
Manufacturer
Manufacturer
Microsemi-PPG
Type of mounting a component on a board/circuit
Mount
On chassis/wire
Power dissipation
P
<277 W
Input capacitance of field effect transistor
Ciss
4.507 nFVds = 25V
Continuous voltage between drain and source
UDSS
<800 V
Continuous drain current
IDSS
<28 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<150 mΩId, Vgs = 14A, 10V
Gate charge
QG
180 nCVgs = 10V
FET Feature
FET Feature
Standard