APTC60DAM18CTG

APTC60DAM18, APTC60DAM18CTG

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Description

Parameters

ParameterAPTC60DAM18CTG
IC package
Package
SP4 Module
Manufacturer
Manufacturer
Microsemi-PPG
Type of mounting a component on a board/circuit
Mount
On chassis/wire
Power dissipation
P
<833 W
Input capacitance of field effect transistor
Ciss
28 nFVds = 25V
Continuous voltage between drain and source
UDSS
<600 V
Continuous drain current
IDSS
<143 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<18 mΩId, Vgs = 71.5A, 10V
Gate charge
QG
1.036 µCVgs = 10V
FET Feature
FET Feature
Standard