APT9M100B

APT9, APT9F100B, APT9M100B

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Description

Parameters

ParameterAPT9F100BAPT9M100B
IC package
Package
TO-247
Manufacturer
Manufacturer
Microsemi-PPG
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<335 W
Input capacitance of field effect transistor
Ciss
2.605 nFVds = 25V
Continuous drain current
IDSS
<9 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<1.5 ΩId, Vgs = 5A, 10V
MOSFET series
Series
(not set)POWER MOS 8™
Gate charge
QG
80 nCVgs = 10V
FET Feature
FET Feature
Standard