APT8M100B

APT8, APT8M100B, APT8M80K

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Description

Parameters

ParameterAPT8M100BAPT8M80K
IC package
Package
TO-247TO-220
Manufacturer
Manufacturer
Microsemi-PPG
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<290 W<225 W
Input capacitance of field effect transistor
Ciss
1.885 nFVds = 25V1.335 nFVds = 25V
Continuous voltage between drain and source
UDSS
(not set)<800 V
Continuous drain current
IDSS
<8 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<1.8 ΩId, Vgs = 4A, 10V<1.5 ΩId, Vgs = 4A, 10V
MOSFET series
Series
(not set)POWER MOS 8™
Gate charge
QG
60 nCVgs = 10V43 nCVgs = 10V
FET Feature
FET Feature
Standard