APT8030

APT8030, APT8030B2VFRG, APT8030B2VRG, APT8030JVFR, APT8030JVR, APT8030LVFRG, APT8030LVRG

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Description

Parameters

ParameterAPT8030B2VFRGAPT8030B2VRGAPT8030JVFRAPT8030JVRAPT8030LVFRGAPT8030LVRG
IC package
Package
T-MAXT-MAXSOT-227SOT-227TO-264TO-264
Manufacturer
Manufacturer
Microsemi-PPG
Type of mounting a component on a board/circuit
Mount
Through-holeThrough-holeOn chassis/wireOn chassis/wireThrough-holeThrough-hole
Power dissipation
P
<520 W<520 W<450 W<450 W<520 W<520 W
Input capacitance of field effect transistor
Ciss
7.9 nFVds = 25V
Continuous voltage between drain and source
UDSS
<800 V
Continuous drain current
IDSS
<27 A<27 A<25 A<25 A<27 A<27 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<300 mΩId, Vgs = 500mA, 10V
MOSFET series
Series
POWER MOS V®
Gate charge
QG
510 nCVgs = 10V
FET Feature
FET Feature
Logic Level Gate