APT60M60JFLL

APT60, APT60M60JFLL, APT60M60JLL, APT60M75JFLL, APT60M75JLL, APT60M75JVFR, APT60M75JVR, APT60M75L2FLLG, APT60M75L2LLG, APT60M80JVR, APT60M80L2VFRG, APT60M80L2VRG, APT60N60BCSG

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Description

Parameters

ParameterAPT60M60JFLLAPT60M60JLLAPT60M75JFLLAPT60M75JLLAPT60M75JVFRAPT60M75JVRAPT60M75L2FLLGAPT60M75L2LLGAPT60M80JVRAPT60M80L2VFRGAPT60M80L2VRGAPT60N60BCSG
IC package
Package
SOT-227SOT-227SOT-227SOT-227SOT-227SOT-227TO-264TO-264SOT-227TO-264TO-264TO-247
Manufacturer
Manufacturer
Microsemi-PPG
Type of mounting a component on a board/circuit
Mount
On chassis/wireOn chassis/wireOn chassis/wireOn chassis/wireOn chassis/wireOn chassis/wireThrough-holeThrough-holeOn chassis/wireThrough-holeThrough-holeThrough-hole
Power dissipation
P
<694 W<694 W<595 W<595 W<700 W<700 W<893 W<893 W<568 W<833 W<833 W<431 W
Input capacitance of field effect transistor
Ciss
12.63 nFVds = 25V12.63 nFVds = 25V8.93 nFVds = 25V8.93 nFVds = 25V19.8 nFVds = 25V19.8 nFVds = 25V8.93 nFVds = 25V8.93 nFVds = 25V14.5 nFVds = 25V13.3 nFVds = 25V13.3 nFVds = 25V7.2 nFVds = 25V
Continuous voltage between drain and source
UDSS
<600 V
Continuous drain current
IDSS
<70 A<70 A<58 A<58 A<62 A<62 A<73 A<73 A<55 A<65 A<65 A<60 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<60 mΩId, Vgs = 35A, 10V<60 mΩId, Vgs = 35A, 10V<75 mΩId, Vgs = 29A, 10V<75 mΩId, Vgs = 29A, 10V<75 mΩId, Vgs = 31A, 10V<75 mΩId, Vgs = 500mA, 10V<75 mΩId, Vgs = 36.5A, 10V<75 mΩId, Vgs = 36.5A, 10V<80 mΩId, Vgs = 500mA, 10V<80 mΩId, Vgs = 32.5A, 10V<80 mΩId, Vgs = 32.5A, 10V<45 mΩId, Vgs = 44A, 10V
MOSFET series
Series
POWER MOS 7®POWER MOS 7®POWER MOS 7®POWER MOS 7®POWER MOS V®POWER MOS V®POWER MOS 7®POWER MOS 7®POWER MOS V®POWER MOS V®POWER MOS V®(not set)
Gate charge
QG
289 nCVgs = 10V289 nCVgs = 10V195 nCVgs = 10V195 nCVgs = 10V1.05 µCVgs = 10V1.05 µCVgs = 10V195 nCVgs = 10V195 nCVgs = 10V870 nCVgs = 10V590 nCVgs = 10V590 nCVgs = 10V190 nCVgs = 10V
FET Feature
FET Feature
Standard