APT6017B2LLG

APT6017, APT6017B2FLLG, APT6017B2LLG, APT6017JFLL, APT6017JLL, APT6017LFLLG, APT6017LLLG

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Description

Parameters

ParameterAPT6017B2FLLGAPT6017B2LLGAPT6017JFLLAPT6017JLLAPT6017LFLLGAPT6017LLLG
IC package
Package
T-MAXT-MAXSOT-227SOT-227TO-264TO-264
Manufacturer
Manufacturer
Microsemi-PPG
Type of mounting a component on a board/circuit
Mount
Through-holeThrough-holeOn chassis/wireOn chassis/wireThrough-holeThrough-hole
Power dissipation
P
<500 W<500 W<375 W<375 W<500 W<500 W
Input capacitance of field effect transistor
Ciss
4.5 nFVds = 25V
Continuous voltage between drain and source
UDSS
<600 V
Continuous drain current
IDSS
<35 A<35 A<31 A<31 A<35 A<35 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<170 mΩId, Vgs = 17.5A, 10V<170 mΩId, Vgs = 17.5A, 10V<170 mΩId, Vgs = 15.5A, 10V<170 mΩId, Vgs = 15.5A, 10V<170 mΩId, Vgs = 17.5A, 10V<170 mΩId, Vgs = 17.5A, 10V
MOSFET series
Series
POWER MOS 7®
Gate charge
QG
100 nCVgs = 10V
FET Feature
FET Feature
Standard