APT6015B2VFRG

APT6015, APT6015B2VFRG, APT6015B2VRG, APT6015JVFR, APT6015JVR, APT6015LVFRG, APT6015LVRG

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Description

Parameters

ParameterAPT6015B2VFRGAPT6015B2VRGAPT6015JVFRAPT6015JVRAPT6015LVFRGAPT6015LVRG
IC package
Package
T-MAXT-MAXSOT-227SOT-227TO-264TO-264
Manufacturer
Manufacturer
Microsemi-PPG
Type of mounting a component on a board/circuit
Mount
Through-holeThrough-holeOn chassis/wireOn chassis/wireThrough-holeThrough-hole
Power dissipation
P
<520 W<520 W<450 W<450 W<520 W<520 W
Input capacitance of field effect transistor
Ciss
9 nFVds = 25V
Continuous voltage between drain and source
UDSS
<600 V
Continuous drain current
IDSS
<38 A<38 A<35 A<35 A<38 A<38 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<150 mΩId, Vgs = 500mA, 10V<150 mΩId, Vgs = 500mA, 10V<150 mΩId, Vgs = 17.5A, 10V<150 mΩId, Vgs = 500mA, 10V<150 mΩId, Vgs = 500mA, 10V<150 mΩId, Vgs = 500mA, 10V
MOSFET series
Series
POWER MOS V®
Gate charge
QG
475 nCVgs = 10V
FET Feature
FET Feature
Logic Level Gate