APT6013

APT6013, APT6013B2FLLG, APT6013B2LLG, APT6013JFLL, APT6013JLL, APT6013JVR, APT6013LFLLG, APT6013LLLG

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Description

Parameters

Parameter		APT6013B2FLLG	APT6013B2LLG	APT6013JFLL	APT6013JLL	APT6013JVR	APT6013LFLLG	APT6013LLLG
IC package	Package	T-MAX	T-MAX	SOT-227	SOT-227	SOT-227	TO-264	TO-264
Manufacturer	Manufacturer	Microsemi-PPG
Type of mounting a component on a board/circuit	Mount	Through-hole	Through-hole	On chassis/wire	On chassis/wire	On chassis/wire	Through-hole	Through-hole
Power dissipation	P	<565 W	<565 W	<460 W	<460 W	<500 W	<565 W	<565 W
Input capacitance of field effect transistor	C_iss	5.63 nFVds = 25V	5.63 nFVds = 25V	5.63 nFVds = 25V	5.63 nFVds = 25V	10.56 nFVds = 25V	5.63 nFVds = 25V	5.63 nFVds = 25V
Continuous voltage between drain and source	U_DSS	<600 V
Continuous drain current	I_DSS	<43 A	<43 A	<39 A	<39 A	<40 A	<43 A	<43 A
FET channel type	Channel	N-ch
Channel resistance at ON state	R_DS-ON	<130 mΩId, Vgs = 21.5A, 10V	<130 mΩId, Vgs = 21.5A, 10V	<130 mΩId, Vgs = 19.5A, 10V	<130 mΩId, Vgs = 19.5A, 10V	<130 mΩId, Vgs = 500mA, 10V	<130 mΩId, Vgs = 21.5A, 10V	<130 mΩId, Vgs = 21.5A, 10V
MOSFET series	Series	POWER MOS 7®	POWER MOS 7®	POWER MOS 7®	POWER MOS 7®	POWER MOS V®	POWER MOS 7®	POWER MOS 7®
Gate charge	Q_G	130 nCVgs = 10V	130 nCVgs = 10V	130 nCVgs = 10V	130 nCVgs = 10V	540 nCVgs = 10V	130 nCVgs = 10V	130 nCVgs = 10V
FET Feature	FET Feature	Standard