APT58M50J

APT58, APT58M50J, APT58M80J

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Description

Parameters

ParameterAPT58M50JAPT58M80J
IC package
Package
SOT-227
Manufacturer
Manufacturer
Microsemi-PPG
Type of mounting a component on a board/circuit
Mount
On chassis/wire
Power dissipation
P
<540 W<960 W
Input capacitance of field effect transistor
Ciss
13.5 nFVds = 25V17.55 nFVds = 25V
Continuous voltage between drain and source
UDSS
<500 V<800 V
Continuous drain current
IDSS
<58 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<65 mΩId, Vgs = 42A, 10V<110 mΩId, Vgs = 43A, 10V
MOSFET series
Series
POWER MOS 8™(not set)
Gate charge
QG
340 nCVgs = 10V570 nCVgs = 10V
FET Feature
FET Feature
Standard