APT56M50L

APT56, APT56M50B2, APT56M50L, APT56M60B2, APT56M60L

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Description

Parameters

ParameterAPT56M50B2APT56M50LAPT56M60B2APT56M60L
IC package
Package
T-MAXTO-264T-MAXTO-264
Manufacturer
Manufacturer
Microsemi-PPG
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<780 W<780 W<1.04 kW<1.04 kW
Input capacitance of field effect transistor
Ciss
8.8 nFVds = 25V8.8 nFVds = 25V11.3 nFVds = 25V11.3 nFVds = 25V
Continuous voltage between drain and source
UDSS
<500 V<500 V<600 V<600 V
Continuous drain current
IDSS
<56 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<100 mΩId, Vgs = 28A, 10V<100 mΩId, Vgs = 28A, 10V<130 mΩId, Vgs = 28A, 10V<130 mΩId, Vgs = 28A, 10V
MOSFET series
Series
(not set)(not set)POWER MOS 8™(not set)
Gate charge
QG
220 nCVgs = 10V220 nCVgs = 10V280 nCVgs = 10V280 nCVgs = 10V
FET Feature
FET Feature
Standard