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| Parameter | APT51F50J | APT51M50J | |
|---|---|---|---|
IC package | Package | SOT-227 | |
Manufacturer | Manufacturer | Microsemi-PPG | |
Type of mounting a component on a board/circuit | Mount | On chassis/wire | |
Power dissipation | P | <480 W | |
Input capacitance of field effect transistor | Ciss | 11.6 nFVds = 25V | |
Continuous voltage between drain and source | UDSS | <500 V | |
Continuous drain current | IDSS | <51 A | |
FET channel type | Channel | N-ch | |
Channel resistance at ON state | RDS-ON | <75 mΩId, Vgs = 37A, 10V | |
Gate charge | QG | 290 nCVgs = 10V | |
FET Feature | FET Feature | Standard | |