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| Parameter | APT40M35JVFR | APT40M70B2VFRG | APT40M70JVFR | APT40M70LVFRG | APT40N60B2CFG | APT40N60JCU2 | APT40N60JCU3 | |
|---|---|---|---|---|---|---|---|---|
IC package | Package | SOT-227 | T-MAX | SOT-227 | TO-264 | T-MAX | SOT-227 | SOT-227 |
Manufacturer | Manufacturer | Microsemi-PPG | ||||||
Type of mounting a component on a board/circuit | Mount | On chassis/wire | Through-hole | On chassis/wire | Through-hole | Through-hole | On chassis/wire | On chassis/wire |
Power dissipation | P | <700 W | <520 W | <450 W | <520 W | <417 W | <290 W | <290 W |
Input capacitance of field effect transistor | Ciss | 20.16 nFVds = 25V | 8.89 nFVds = 25V | 8.89 nFVds = 25V | 8.89 nFVds = 25V | 5.04 nFVds = 25V | 7.015 nFVds = 25V | 7.015 nFVds = 25V |
Continuous voltage between drain and source | UDSS | <400 V | <400 V | <400 V | <400 V | <600 V | <600 V | <600 V |
Continuous drain current | IDSS | <93 A | <57 A | <53 A | <57 A | <40 A | <40 A | <40 A |
FET channel type | Channel | N-ch | ||||||
Channel resistance at ON state | RDS-ON | <35 mΩId, Vgs = 46.5A, 10V | <70 mΩId, Vgs = 500mA, 10V | <70 mΩId, Vgs = 26.5A, 10V | <70 mΩId, Vgs = 500mA, 10V | <110 mΩId, Vgs = 20A, 10V | <70 mΩId, Vgs = 20A, 10V | <70 mΩId, Vgs = 20A, 10V |
MOSFET series | Series | POWER MOS V® | POWER MOS V® | POWER MOS V® | POWER MOS V® | CoolMOS™ | (not set) | (not set) |
Gate charge | QG | 1.065 µCVgs = 10V | 495 nCVgs = 10V | 495 nCVgs = 10V | 495 nCVgs = 10V | 185 nCVgs = 10V | 259 nCVgs = 10V | 259 nCVgs = 10V |
FET Feature | FET Feature | Standard | ||||||