APT34

APT34, APT34F100B2, APT34F100L, APT34F60B, APT34F60BG, APT34M120J, APT34M60B, APT34N80B2C3G, APT34N80LC3G

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Description

Parameters

Parameter		APT34F100B2	APT34F100L	APT34F60B	APT34F60BG	APT34M120J	APT34M60B	APT34N80B2C3G	APT34N80LC3G
IC package	Package	T-MAX	TO-264	TO-247	TO-247	SOT-227	TO-247	T-MAX	TO-264
Manufacturer	Manufacturer	Microsemi-PPG
Type of mounting a component on a board/circuit	Mount	Through-hole	Through-hole	Through-hole	Through-hole	On chassis/wire	Through-hole	Through-hole	Through-hole
Power dissipation	P	<1.135 kW	<1.135 kW	<624 W	<624 W	<960 W	<624 W	<417 W	<417 W
Input capacitance of field effect transistor	C_iss	9.835 nFVds = 25V	9.835 nFVds = 25V	6.64 nFVds = 25V	6.64 nFVds = 25V	18.2 nFVds = 25V	6.64 nFVds = 25V	4.51 nFVds = 25V	4.51 nFVds = 25V
Continuous voltage between drain and source	U_DSS	(not set)	(not set)	<600 V	<600 V	(not set)	<600 V	<800 V	<800 V
Continuous drain current	I_DSS	<34 A
FET channel type	Channel	N-ch
Channel resistance at ON state	R_DS-ON	<400 mΩId, Vgs = 18A, 10V	<400 mΩId, Vgs = 18A, 10V	<210 mΩId, Vgs = 17A, 10V	<210 mΩId, Vgs = 17A, 10V	<300 mΩId, Vgs = 25A, 10V	<210 mΩId, Vgs = 17A, 10V	<145 mΩId, Vgs = 22A, 10V	<145 mΩId, Vgs = 22A, 10V
MOSFET series	Series	POWER MOS 8™	(not set)	(not set)	POWER MOS 8™	(not set)	POWER MOS 8™	(not set)	(not set)
Gate charge	Q_G	305 nCVgs = 10V	305 nCVgs = 10V	165 nCVgs = 10V	165 nCVgs = 10V	560 nCVgs = 10V	165 nCVgs = 10V	355 nCVgs = 10V	355 nCVgs = 10V
FET Feature	FET Feature	Standard