APT31M100B2

APT31, APT31M100B2, APT31M100L, APT31N60BCSG, APT31N80JC3

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Description

Parameters

ParameterAPT31M100B2APT31M100LAPT31N60BCSGAPT31N80JC3
IC package
Package
T-MAXTO-264TO-247SOT-227
Manufacturer
Manufacturer
Microsemi-PPG
Type of mounting a component on a board/circuit
Mount
Through-holeThrough-holeThrough-holeOn chassis/wire
Power dissipation
P
<1.04 kW<1.04 kW<255 W<833 W
Input capacitance of field effect transistor
Ciss
8.5 nFVds = 25V8.5 nFVds = 25V3.055 nFVds = 25V4.51 nFVds = 25V
Continuous voltage between drain and source
UDSS
(not set)(not set)<600 V<800 V
Continuous drain current
IDSS
<31 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<400 mΩId, Vgs = 16A, 10V<400 mΩId, Vgs = 16A, 10V<100 mΩId, Vgs = 18A, 10V<145 mΩId, Vgs = 22A, 10V
MOSFET series
Series
POWER MOS 8™POWER MOS 8™CoolMOS™CoolMOS™
Gate charge
QG
260 nCVgs = 10V260 nCVgs = 10V85 nCVgs = 10V355 nCVgs = 10V
FET Feature
FET Feature
Standard