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| Parameter | APT31M100B2 | APT31M100L | APT31N60BCSG | APT31N80JC3 | |
|---|---|---|---|---|---|
IC package | Package | T-MAX | TO-264 | TO-247 | SOT-227 |
Manufacturer | Manufacturer | Microsemi-PPG | |||
Type of mounting a component on a board/circuit | Mount | Through-hole | Through-hole | Through-hole | On chassis/wire |
Power dissipation | P | <1.04 kW | <1.04 kW | <255 W | <833 W |
Input capacitance of field effect transistor | Ciss | 8.5 nFVds = 25V | 8.5 nFVds = 25V | 3.055 nFVds = 25V | 4.51 nFVds = 25V |
Continuous voltage between drain and source | UDSS | (not set) | (not set) | <600 V | <800 V |
Continuous drain current | IDSS | <31 A | |||
FET channel type | Channel | N-ch | |||
Channel resistance at ON state | RDS-ON | <400 mΩId, Vgs = 16A, 10V | <400 mΩId, Vgs = 16A, 10V | <100 mΩId, Vgs = 18A, 10V | <145 mΩId, Vgs = 22A, 10V |
MOSFET series | Series | POWER MOS 8™ | POWER MOS 8™ | CoolMOS™ | CoolMOS™ |
Gate charge | QG | 260 nCVgs = 10V | 260 nCVgs = 10V | 85 nCVgs = 10V | 355 nCVgs = 10V |
FET Feature | FET Feature | Standard | |||