APT29F100B2

APT29, APT29F100B2, APT29F100L, APT29F80J

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Description

Parameters

ParameterAPT29F100B2APT29F100LAPT29F80J
IC package
Package
T-MAXTO-264SOT-227
Manufacturer
Manufacturer
Microsemi-PPG
Type of mounting a component on a board/circuit
Mount
Through-holeThrough-holeOn chassis/wire
Power dissipation
P
<1.04 kW
Input capacitance of field effect transistor
Ciss
8.5 nFVds = 25V
Continuous voltage between drain and source
UDSS
(not set)(not set)<800 V
Continuous drain current
IDSS
<29 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<460 mΩId, Vgs = 16A, 10V
MOSFET series
Series
POWER MOS 8™(not set)(not set)
Gate charge
QG
260 nCVgs = 10V
FET Feature
FET Feature
Standard