APT22F100J

APT22, APT22F100J, APT22F120B2, APT22F120L, APT22F80B

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Description

Parameters

ParameterAPT22F100JAPT22F120B2APT22F120LAPT22F80B
IC package
Package
SOT-227T-MAXTO-264TO-247
Manufacturer
Manufacturer
Microsemi-PPG
Type of mounting a component on a board/circuit
Mount
On chassis/wireThrough-holeThrough-holeThrough-hole
Power dissipation
P
<545 W<1.04 kW<1.04 kW<625 W
Input capacitance of field effect transistor
Ciss
9.835 nFVds = 25V8.37 nFVds = 25V8.37 nFVds = 25V4.595 nFVds = 25V
Continuous voltage between drain and source
UDSS
(not set)(not set)(not set)<800 V
Continuous drain current
IDSS
<22 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<400 mΩId, Vgs = 18A, 10V<800 mΩId, Vgs = 12A, 10V<800 mΩId, Vgs = 12A, 10V<500 mΩId, Vgs = 12A, 10V
MOSFET series
Series
POWER MOS 8™POWER MOS 8™POWER MOS 8™(not set)
Gate charge
QG
305 nCVgs = 10V260 nCVgs = 10V260 nCVgs = 10V150 nCVgs = 10V
FET Feature
FET Feature
Standard