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| Parameter | APT19F100J | APT19M120J | |
|---|---|---|---|
IC package | Package | SOT-227 | |
Manufacturer | Manufacturer | Microsemi-PPG | |
Type of mounting a component on a board/circuit | Mount | On chassis/wire | |
Power dissipation | P | <460 W | <545 W |
Input capacitance of field effect transistor | Ciss | 8.5 nFVds = 25V | 9.67 nFVds = 25V |
Continuous drain current | IDSS | <19 A | |
FET channel type | Channel | N-ch | |
Channel resistance at ON state | RDS-ON | <460 mΩId, Vgs = 16A, 10V | <560 mΩId, Vgs = 14A, 10V |
MOSFET series | Series | POWER MOS 8™ | |
Gate charge | QG | 260 nCVgs = 10V | 300 nCVgs = 10V |
FET Feature | FET Feature | Standard | |