APT18M100B

APT18, APT18F60B, APT18M100B, APT18M80B

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Description

Parameters

ParameterAPT18F60BAPT18M100BAPT18M80B
IC package
Package
TO-247
Manufacturer
Manufacturer
Microsemi-PPG
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<335 W<625 W<500 W
Input capacitance of field effect transistor
Ciss
3.55 nFVds = 25V4.845 nFVds = 25V3.76 nFVds = 25V
Continuous voltage between drain and source
UDSS
<600 V(not set)<800 V
Continuous drain current
IDSS
<18 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<390 mΩId, Vgs = 9A, 10V<700 mΩId, Vgs = 9A, 10V<560 mΩId, Vgs = 9A, 10V
MOSFET series
Series
(not set)(not set)POWER MOS 8™
Gate charge
QG
90 nCVgs = 10V150 nCVgs = 10V120 nCVgs = 10V
FET Feature
FET Feature
Standard