APT12M80B

APT12, APT12F60K, APT12M80B

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Description

Parameters

ParameterAPT12F60KAPT12M80B
IC package
Package
TO-220TO-247
Manufacturer
Manufacturer
Microsemi-PPG
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<225 W<335 W
Input capacitance of field effect transistor
Ciss
2.2 nFVds = 25V2.47 nFVds = 25V
Continuous voltage between drain and source
UDSS
<600 V<800 V
Continuous drain current
IDSS
<12 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<620 mΩId, Vgs = 6A, 10V<900 mΩId, Vgs = 6A, 10V
MOSFET series
Series
(not set)POWER MOS 8™
Gate charge
QG
55 nCVgs = 10V80 nCVgs = 10V
FET Feature
FET Feature
Standard