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| Parameter | APT10025JVFR | APT10025JVR | |
|---|---|---|---|
IC package | Package | SOT-227 | |
Manufacturer | Manufacturer | Microsemi-PPG | |
Type of mounting a component on a board/circuit | Mount | On chassis/wire | |
Power dissipation | P | <700 W | |
Input capacitance of field effect transistor | Ciss | 18 nFVds = 25V | |
Continuous drain current | IDSS | <34 A | |
FET channel type | Channel | N-ch | |
Channel resistance at ON state | RDS-ON | <250 mΩId, Vgs = 500mA, 10V | |
MOSFET series | Series | POWER MOS V® | |
Gate charge | QG | 990 nCVgs = 10V | |
FET Feature | FET Feature | Standard | |