2SK3799(Q)

2SK3799, 2SK3799(Q)

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Description

Parameters

Parameter2SK3799(Q)
IC package
Package
2-10U1B
Manufacturer
Manufacturer
Toshiba
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<50 W
Input capacitance of field effect transistor
Ciss
2.2 nFVds = 25V
Continuous voltage between drain and source
UDSS
<900 V
Continuous drain current
IDSS
<8 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<1.3 ΩId, Vgs = 4A, 10V
Gate charge
QG
60 nCVgs = 10V
FET Feature
FET Feature
Standard