2SK3762(Q,M)

2SK3762, 2SK3762(M), 2SK3762(Q,M)

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Description

Parameters

Parameter2SK3762(M)2SK3762(Q,M)
IC package
Package
TO-220AB
Manufacturer
Manufacturer
Toshiba
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<62 W
Input capacitance of field effect transistor
Ciss
470 pFVds = 25V
Continuous voltage between drain and source
UDSS
<900 V
Continuous drain current
IDSS
<2.5 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<6.4 ΩId, Vgs = 1.5A, 10V
Gate charge
QG
12 nCVgs = 10V
FET Feature
FET Feature
Standard