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| Parameter | 2SK3117 | |
|---|---|---|
IC package | Package | 2-16H1B |
Manufacturer | Manufacturer | Toshiba |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <150 W |
Input capacitance of field effect transistor | Ciss | 3.72 nFVds = 10V |
Continuous voltage between drain and source | UDSS | <500 V |
Continuous drain current | IDSS | <20 A |
FET channel type | Channel | N-ch |
Channel resistance at ON state | RDS-ON | <270 mΩId, Vgs = 10A, 10V |
Gate charge | QG | 80 nCVgs = 10V |
FET Feature | FET Feature | Standard |