2SK2961(F,M)

2SK2961, 2SK2961(F,M)

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Description

Parameters

Parameter2SK2961(F,M)
IC package
Package
TO-92-3 (Long Body), TO-226
Manufacturer
Manufacturer
Toshiba
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<900 mW
Input capacitance of field effect transistor
Ciss
170 pFVds = 10V
Continuous voltage between drain and source
UDSS
<60 V
Continuous drain current
IDSS
<2 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<270 mΩId, Vgs = 1A, 10V
Gate charge
QG
5.8 nCVgs = 10V
FET Feature
FET Feature
Logic Level Gate