2SK2632LS

2SK2632, 2SK2632LS

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

Parameter2SK2632LS
Manufacturer
Manufacturer
SANYO Semiconductor (U.S.A) Co
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<2 W
Input capacitance of field effect transistor
Ciss
550 pFVds = 20V
Continuous voltage between drain and source
UDSS
<800 V
Continuous drain current
IDSS
<2.5 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<4.8 ΩId, Vgs = 1.3A, 15V
Gate charge
QG
15 nCVgs = 10V
FET Feature
FET Feature
Standard