2SK2615

2SK2615, 2SK2615(TE12L), 2SK2615(TE12L,F)

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Description

Parameters

Parameter2SK2615(TE12L)2SK2615(TE12L,F)
IC package
Package
PW-MINI
Manufacturer
Manufacturer
Toshiba
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<500 mW
Input capacitance of field effect transistor
Ciss
150 pFVds = 10V
Continuous voltage between drain and source
UDSS
<60 V
Continuous drain current
IDSS
<2 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<300 mΩId, Vgs = 1A, 10V
Gate charge
QG
6 nCVgs = 10V
FET Feature
FET Feature
Logic Level Gate