2SK2614

2SK2614, 2SK2614(Q), 2SK2614(TE16L1,Q)

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

Parameter2SK2614(Q)2SK2614(TE16L1,Q)
IC package
Package
2-7B1B, 2-7B1B2-7B1B
Manufacturer
Manufacturer
Toshiba
Type of mounting a component on a board/circuit
Mount
Through-holeSurface mount
Power dissipation
P
<40 W
Input capacitance of field effect transistor
Ciss
900 pFVds = 10V
Continuous voltage between drain and source
UDSS
<50 V
Continuous drain current
IDSS
<20 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<46 mΩId, Vgs = 10A, 10V
Gate charge
QG
25 nCVgs = 10V
FET Feature
FET Feature
Logic Level Gate