2SK2311(TE24R,Q)

2SK2311, 2SK2311(TE24L,Q), 2SK2311(TE24R), 2SK2311(TE24R,Q)

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Description

Parameters

Parameter2SK2311(TE24L,Q)2SK2311(TE24R)2SK2311(TE24R,Q)
IC package
Package
2-10S2BTO-220FLTO-220FL
Manufacturer
Manufacturer
Toshiba
Type of mounting a component on a board/circuit
Mount
Surface mountThrough-holeThrough-hole
Power dissipation
P
<40 W
Input capacitance of field effect transistor
Ciss
1 nFVds = 10V
Continuous voltage between drain and source
UDSS
<60 V
Continuous drain current
IDSS
<25 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<46 mΩId, Vgs = 12A, 10V
Gate charge
QG
38 nCVgs = 10V
FET Feature
FET Feature
Logic Level Gate