2SK2231(TE16L1,NQ)

2SK2231, 2SK2231(Q), 2SK2231(TE16L1,NQ), 2SK2231(TE16R), 2SK2231(TE16R1,NQ)

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Description

Parameters

Parameter2SK2231(Q)2SK2231(TE16L1,NQ)2SK2231(TE16R)2SK2231(TE16R1,NQ)
IC package
Package
2-7B1B, 2-7B1B2-7B1B, 2-7J1B2-7B1B, 2-7J1B2-7B1B, 2-7J1B
Manufacturer
Manufacturer
Toshiba
Type of mounting a component on a board/circuit
Mount
Through-holeSurface mountSurface mountSurface mount
Power dissipation
P
<20 W
Input capacitance of field effect transistor
Ciss
370 pFVds = 10V
Continuous voltage between drain and source
UDSS
<60 V
Continuous drain current
IDSS
<5 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<160 mΩId, Vgs = 2.5A, 10V
Gate charge
QG
12 nCVgs = 10V
FET Feature
FET Feature
Logic Level Gate