2SK2173(F)

2SK2173, 2SK2173(F)

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Description

Parameters

Parameter2SK2173(F)
IC package
Package
2-16C1B (TO-247 N)
Manufacturer
Manufacturer
Toshiba
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<125 W
Input capacitance of field effect transistor
Ciss
3.55 nFVds = 10V
Continuous voltage between drain and source
UDSS
<60 V
Continuous drain current
IDSS
<50 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<17 mΩId, Vgs = 25A, 10V
Gate charge
QG
110 nCVgs = 10V
FET Feature
FET Feature
Logic Level Gate