2SK1365

2SK1365, 2SK1365(F)

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

Parameter2SK1365(F)
IC package
Package
2-16F1B
Manufacturer
Manufacturer
Toshiba
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<90 W
Input capacitance of field effect transistor
Ciss
1.3 nFVds = 25V
Continuous drain current
IDSS
<7 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<1.8 ΩId, Vgs = 4A, 10V
Gate charge
QG
120 nCVgs = 10V
FET Feature
FET Feature
Logic Level Gate