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| Parameter | 2SK1119(F) | |
|---|---|---|
IC package | Package | TO-220AB |
Manufacturer | Manufacturer | Toshiba |
Type of mounting a component on a board/circuit | Mount | Through-hole |
Power dissipation | P | <100 W |
Input capacitance of field effect transistor | Ciss | 700 pFVds = 25V |
Continuous drain current | IDSS | <4 A |
FET channel type | Channel | N-ch |
Channel resistance at ON state | RDS-ON | <3.8 ΩId, Vgs = 2A, 10V |
Gate charge | QG | 60 nCVgs = 10V |
FET Feature | FET Feature | Standard |