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| Parameter | 2SJ681(Q) | |
|---|---|---|
Manufacturer | Manufacturer | Toshiba |
Type of mounting a component on a board/circuit | Mount | Through-hole |
Power dissipation | P | <20 W |
Input capacitance of field effect transistor | Ciss | 700 pFVds = 10V |
Continuous voltage between drain and source | UDSS | <60 V |
Continuous drain current | IDSS | <5 A |
FET channel type | Channel | P-ch |
Channel resistance at ON state | RDS-ON | <170 mΩId, Vgs = 2.5A, 10V |
Gate charge | QG | 15 nCVgs = 10V |
FET Feature | FET Feature | Logic Level Gate |