2SJ656

2SJ656

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Description

Parameters

Parameter2SJ656
Manufacturer
Manufacturer
SANYO Semiconductor (U.S.A) Co
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<2 W
Input capacitance of field effect transistor
Ciss
4.2 nFVds = 20V
Continuous voltage between drain and source
UDSS
<100 V
Continuous drain current
IDSS
<18 A
FET channel type
Channel
P-ch
Channel resistance at ON state
RDS-ON
<75.5 mΩId, Vgs = 9A, 10V
Gate charge
QG
74 nCVgs = 10V
FET Feature
FET Feature
Logic Level Gate