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| Parameter | 2SJ651 | |
|---|---|---|
Manufacturer | Manufacturer | SANYO Semiconductor (U.S.A) Co |
Type of mounting a component on a board/circuit | Mount | Through-hole |
Power dissipation | P | <2 W |
Input capacitance of field effect transistor | Ciss | 2.2 nFVds = 20V |
Continuous voltage between drain and source | UDSS | <60 V |
Continuous drain current | IDSS | <20 A |
FET channel type | Channel | P-ch |
Channel resistance at ON state | RDS-ON | <60 mΩId, Vgs = 10A, 10V |
Gate charge | QG | 45 nCVgs = 10V |
FET Feature | FET Feature | Logic Level Gate |