2SJ567(TE16L1,NQ)

2SJ567, 2SJ567(TE16L1,NQ)

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Description

Parameters

Parameter2SJ567(TE16L1,NQ)
IC package
Package
2-7J1B
Manufacturer
Manufacturer
Toshiba
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<20 W
Input capacitance of field effect transistor
Ciss
410 pFVds = 10V
Continuous voltage between drain and source
UDSS
<200 V
Continuous drain current
IDSS
<2.5 A
FET channel type
Channel
P-ch
Channel resistance at ON state
RDS-ON
<2 ΩId, Vgs = 1.5A, 10V
Gate charge
QG
10 nCVgs = 10V
FET Feature
FET Feature
Standard