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| Parameter | 2SJ412(Q) | 2SJ412(SM,Q) | 2SJ412(TE24L,Q) | |
|---|---|---|---|---|
IC package | Package | TO-220, TO-220 | TO-220, 2-10S1B | TO-220, TO-220SM |
Manufacturer | Manufacturer | Toshiba | ||
Type of mounting a component on a board/circuit | Mount | Through-hole | Through-hole | Surface mount |
Power dissipation | P | <60 W | ||
Input capacitance of field effect transistor | Ciss | 1.1 nFVds = 10V | ||
Continuous voltage between drain and source | UDSS | <100 V | ||
Continuous drain current | IDSS | <16 A | ||
FET channel type | Channel | P-ch | ||
Channel resistance at ON state | RDS-ON | <210 mΩId, Vgs = 6A, 10V | ||
Gate charge | QG | 48 nCVgs = 10V | ||
FET Feature | FET Feature | Logic Level Gate | Standard | Logic Level Gate |