2N7000

2N7000, 2N7000,126, 2N7000BU, 2N7000_D26Z, 2N7000_D74Z, 2N7000_D75Z, 2N7000G, 2N7000RLRA, 2N7000RLRAG, 2N7000RLRMG, 2N7000RLRPG, 2N7000TA

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Description

Parameters

Parameter2N7000,1262N7000BU2N7000_D26Z2N7000_D74Z2N7000_D75Z2N7000G2N7000RLRA2N7000RLRAG2N7000RLRMG2N7000RLRPG2N7000TA
IC package
Package
TO-92-3 (Standard Body), TO-226
Manufacturer
Manufacturer
NXP SemiconductorsFairchild SemiconductorFairchild SemiconductorFairchild SemiconductorFairchild SemiconductorON SemiconductorON SemiconductorON SemiconductorON SemiconductorON SemiconductorFairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<830 mW<400 mW<400 mW<400 mW<400 mW<350 mW<350 mW<350 mW<350 mW<350 mW<400 mW
Input capacitance of field effect transistor
Ciss
40 pFVds = 10V30 pFVds = 25V50 pFVds = 25V50 pFVds = 25V50 pFVds = 25V60 pFVds = 25V60 pFVds = 25V60 pFVds = 25V60 pFVds = 25V60 pFVds = 25V30 pFVds = 25V
Continuous voltage between drain and source
UDSS
<60 V
Continuous drain current
IDSS
<300 mA<200 mA<200 mA<200 mA<200 mA<200 mA<200 mA<200 mA<200 mA<200 mA<200 mA
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<5 ΩId, Vgs = 500mA, 10V
MOSFET series
Series
TrenchMOS™STripFET™STripFET™STripFET™STripFET™STripFET™STripFET™STripFET™STripFET™STripFET™STripFET™
Gate charge
QG
2 nC
FET Feature
FET Feature
Logic Level Gate