XN04A88

XN04A88, XN04A8800L

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Description

Parameters

ParameterXN04A8800L
IC package
Package
Mini 6P
Manufacturer
Manufacturer
Panasonic - SSG
Continuous collector current
IC
<100 mA
Constant power dissipated on the transistor collector
PC
<300 mW
Static current transfer coefficient of bipolar transistor
hFE
>150Ic, Vce = 2mA, 10V
Saturation voltage between collector and emitter of transistor
UCE-sat
<300 mVIb, Ic = 10mA, 100mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<80 MHz
Bipolar transistor structure
Structure
1 NPN, 1 PNP - Pre-Biased (Dual)
Collector cutoff current
Ifrc
500 nA
Number of elements of the same type in single chip
Elements
2
Resistance between emitter and base
RE-B
4.7 kΩ
Saturation voltage between collector and emitter of 2nd transistor
UCE-sat2
<250 mVIb, Ic = 300µA, 10mA
Static current transfer coefficient of 2nd bipolar transistor
hFE2
>20Ic, Vce = 5mA, 10V
Collector cutoff current of 2nd transistor
Ifrc2
<100 µA
Limit frequency of current transfer coefficient of 2nd bipolar transistor
fh212
<100 MHz