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| Parameter | PEMF21,115 | |
|---|---|---|
IC package | Package | SS Mini-6 (SOT-666) |
Manufacturer | Manufacturer | NXP Semiconductors |
Continuous collector current | IC | <100 mA |
Constant power dissipated on the transistor collector | PC | <300 mW |
Static current transfer coefficient of bipolar transistor | hFE | >200Ic, Vce = 10mA, 2V |
Saturation voltage between collector and emitter of transistor | UCE-sat | <250 mVIb, Ic = 10mA, 200mA |
Bipolar transistor structure | Structure | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Number of elements of the same type in single chip | Elements | 2 |
Resistance, connected to base | RB | 10 kΩ |
Resistance between emitter and base | RE-B | 10 kΩ |
Saturation voltage between collector and emitter of 2nd transistor | UCE-sat2 | <300 mVIb, Ic = 500µA, 10mA |
Static current transfer coefficient of 2nd bipolar transistor | hFE2 | >30Ic, Vce = 5mA, 5V |
Continuous collector current of 2nd transistor | IC2 | <500 mA |