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| Parameter | PEMB30,115 | PEMB30,315 | |
|---|---|---|---|
IC package | Package | SS Mini-6 (SOT-666) | |
Manufacturer | Manufacturer | NXP Semiconductors | |
Continuous collector current | IC | <100 mA | |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <50 V | |
Constant power dissipated on the transistor collector | PC | <200 mW | |
Static current transfer coefficient of bipolar transistor | hFE | >30Ic, Vce = 20mA, 5V | |
Saturation voltage between collector and emitter of transistor | UCE-sat | <150 mVIb, Ic = 500µA, 10mA | |
Bipolar transistor structure | Structure | PNP Pre-Biased | |
Collector cutoff current | Ifrc | (not set) | 1 µA |
Number of elements of the same type in single chip | Elements | 2 | |
Resistance, connected to base | RB | 2.2 kΩ | |