PBLS6004

PBLS6004, PBLS6004D,115

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Description

Parameters

ParameterPBLS6004D,115
IC package
Package
SC-74-6
Manufacturer
Manufacturer
NXP Semiconductors
Continuous collector current
IC
<100 mA
Constant power dissipated on the transistor collector
PC
<600 mW
Static current transfer coefficient of bipolar transistor
hFE
>150Ic, Vce = 500mA, 5V
Saturation voltage between collector and emitter of transistor
UCE-sat
<180 mVIb, Ic = 50mA, 500mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<185 MHz
Bipolar transistor structure
Structure
1 NPN, 1 PNP - Pre-Biased (Dual)
Collector cutoff current
Ifrc
100 nA
Number of elements of the same type in single chip
Elements
2
Resistance, connected to base
RB
22 kΩ
Resistance between emitter and base
RE-B
22 kΩ
Saturation voltage between collector and emitter of 2nd transistor
UCE-sat2
<150 mVIb, Ic = 500µA, 10mA
Static current transfer coefficient of 2nd bipolar transistor
hFE2
>60Ic, Vce = 5mA, 5V
Continuous collector current of 2nd transistor
IC2
<1 A
Collector cutoff current of 2nd transistor
Ifrc2
<1 µA