PBLS4005V,115

PBLS4005, PBLS4005D,115, PBLS4005V,115, PBLS4005Y,115

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Description

Parameters

ParameterPBLS4005D,115PBLS4005V,115PBLS4005Y,115
IC package
Package
SC-74-6SS Mini-6 (SOT-666)SC-70-6, SC-88, SOT-323-6, SOT-363
Manufacturer
Manufacturer
NXP Semiconductors
Continuous collector current
IC
<100 mA
Constant power dissipated on the transistor collector
PC
<600 mW<300 mW<300 mW
Static current transfer coefficient of bipolar transistor
hFE
>300Ic, Vce = 100mA, 5V>150Ic, Vce = 100mA, 2V>200Ic, Vce = 10mA, 2V
Saturation voltage between collector and emitter of transistor
UCE-sat
<140 mVIb, Ic = 1mA, 100mA<130 mVIb, Ic = 5mA, 100mA<130 mVIb, Ic = 5mA, 100mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<150 MHz<300 MHz<300 MHz
Bipolar transistor structure
Structure
1 NPN, 1 PNP - Pre-Biased (Dual)
Collector cutoff current
Ifrc
1 µA
Number of elements of the same type in single chip
Elements
2
Resistance, connected to base
RB
47 kΩ
Resistance between emitter and base
RE-B
47 kΩ
Saturation voltage between collector and emitter of 2nd transistor
UCE-sat2
<150 mVIb, Ic = 500µA, 10mA
Static current transfer coefficient of 2nd bipolar transistor
hFE2
>80Ic, Vce = 5mA, 5V
Continuous collector current of 2nd transistor
IC2
<1 A<500 mA<500 mA