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| Parameter | PBLS2003D,115 | PBLS2003S,115 | |
|---|---|---|---|
IC package | Package | SC-74-6 | 8-SOIC (3.9мм ширина) |
Manufacturer | Manufacturer | NXP Semiconductors | |
Continuous collector current | IC | <100 mA | <3 A |
Constant power dissipated on the transistor collector | PC | <400 mW | <550 mW |
Static current transfer coefficient of bipolar transistor | hFE | >220Ic, Vce = 100mA, 2V | >150Ic, Vce = 2A, 2V |
Saturation voltage between collector and emitter of transistor | UCE-sat | <150 mVIb, Ic = 50mA, 500mA | <255 mVIb, Ic = 100mA, 2A |
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <185 MHz | <100 MHz |
Bipolar transistor structure | Structure | 1 NPN, 1 PNP - Pre-Biased (Dual) | 1 NPN Prebiased, 1 PNP |
Collector cutoff current | Ifrc | 100 nA | (not set) |
Number of elements of the same type in single chip | Elements | 2 | |
Resistance, connected to base | RB | 10 kΩ | |
Resistance between emitter and base | RE-B | 10 kΩ | |
Saturation voltage between collector and emitter of 2nd transistor | UCE-sat2 | <150 mVIb, Ic = 500µA, 10mA | |
Static current transfer coefficient of 2nd bipolar transistor | hFE2 | >30Ic, Vce = 5mA, 5V | |
Continuous collector current of 2nd transistor | IC2 | <1 A | <100 mA |