PBLS1502

PBLS1502, PBLS1502V,115, PBLS1502Y,115

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

ParameterPBLS1502V,115PBLS1502Y,115
IC package
Package
SS Mini-6 (SOT-666)SC-70-6, SC-88, SOT-323-6, SOT-363
Manufacturer
Manufacturer
NXP Semiconductors
Continuous collector current
IC
<500 mA<100 mA
Constant power dissipated on the transistor collector
PC
<300 mW
Static current transfer coefficient of bipolar transistor
hFE
>200Ic, Vce = 10mA, 2V>30.2Ic, Vce = 10mA, 5V
Saturation voltage between collector and emitter of transistor
UCE-sat
<150 mVIb, Ic = 10mA, 200mA<150 mVIb, Ic = 500µA, 10mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<280 MHz
Bipolar transistor structure
Structure
1 NPN, 1 PNP - Pre-Biased (Dual)
Collector cutoff current
Ifrc
100 nA
Number of elements of the same type in single chip
Elements
2
Resistance, connected to base
RB
4.7 kΩ
Resistance between emitter and base
RE-B
4.7 kΩ
Saturation voltage between collector and emitter of 2nd transistor
UCE-sat2
<150 mVIb, Ic = 500µA, 10mA(not set)
Static current transfer coefficient of 2nd bipolar transistor
hFE2
>30Ic, Vce = 10mA, 5V(not set)
Continuous collector current of 2nd transistor
IC2
(not set)<500 mA